20n60s5 transistor datasheet booklet

High speed switching, trr 10a high reverse voltage and high reliability rohs compliant. R ge 1 m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c 25 c 100 a i c90 t c 90 c60a i cm t c 25 c, 1 ms 200 a ssoa v ge 15 v, t vj. Mosiii 2sk2700 chopper regulator, dcdc converter and motor drive. Improved transconductance type package ordering code marking 20n60s5. New revolutionary high voltage technology id 20 a ultra low gate charge pgto247 periodic avalanche rated extreme dvdt rated ultra low effective capacitances improved transconductance type package ordering code marking spw20n60s5 pgto247. It is silicon nitride passivated ionimplanted epitaxial planar construction. Germanium glass diode 1n601n60p taitron components. Spp20n60s5 transistor datasheet, spp20n60s5 equivalent, pdf data sheets. Sierra ic inc strives to become the strongest link in your supply chain. Fqp6n60cfqpf6n60c 600v nchannel mosfet general description these nchannel enhancement mode power field effect transistors are produced using fairchilds proprietary, planar stripe, dmos technology. Recent listings manufacturer directory get instant insight into any electronic component. Ka7812 datasheet 3terminal 1a positive voltage regulator. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching. Id 20 a feature new revolutionary high voltage technology ultra.

Infineon, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Transistor gain given hfe is only an approximate value. Contains pinouts for connectors and information about how to build cables etc. Infineon 20n60s5 mosfet are available at mouser electronics. Spw24n60c3coolmostm power transistorfeatures new revolutionary high voltage technology ultra low gate charge periodic avalanche rated extreme dv dt rated ultra low effective capacitances improved transconductance datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes and other semiconductors. Output current to 1a output voltages of 24v thermal overload protection short circuit protection output transistor safe operating area protection. Thermal characteristicsthermal resistance, junction caser thjc datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes and other semiconductors. Transistor pin outs for low to medium power type transistors viewed from below. The is a ultrafast rectifier with soft recovery characteristics. Power transistor,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Utc 4 amps, 600 volts nchannel power mosfet,alldatasheet, datasheet, datasheet search site for. Below are the operating specifications of common npn transistors note that these specifications vary according to different manufacturers. Spw20n60s5 cool mos power transistor vds 600 v feature rdson 0. Id 20 a feature new revolutionary high voltage technology ultra low gate charge periodic avalanche rated.

Please note the new package dimensions arccording to pcn 2009. This transistor is an electrostaticsensitive device. Toshiba field effect transistor silicon n channel mos type. Power transistor, 20n60s5 datasheet, 20n60s5 circuit, 20n60s5 data sheet. The utc 4n60 is a high voltage power mosfet and is designed to have better characteristics, such as. Ultralow v cesat igbt ixgn 60n60 v ces 600 v i c25 100 a v cesat 1. The function is 600650 volts nchannel power mosfet. The 2n6099 is trans npn 60v 10a to220, that includes 2n6099 series, they are designed to operate with a tube packaging, part aliases is shown on datasheet note for use in a bk, that offers unit weight features such as 0. Cool mos power transistor, 20n60s5 pdf download, 20n60s5 download, 20n60s5 down, 20n60s5 pdf down, 20n60s5 pdf download, 20n60s5 datasheets, 20n60s5 pdf, 20n60s5 circuit. S7059mdsr60s portable minidisc recorder mdsr60s model in the interests of usersafety the set should be restored to its original condition and only parts identical to those specified be used. Please note the new package dimensions arccording to pcn. Microsemi corporation, a wholly owned subsidiary of microchip technology inc.

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